Symbol Item Reference Ratings Unit
I T (RMS) R.M.S. On-State Current
I TSM Surge On-State Current
Tc=98℃
One cycle, 50Hz/60Hz, Peak value non-repetitive
I 2 t I 2 t(for fusing)
P GM Peak Gate Power Dissipation
P G(AV) Average Gate Power Dissipation
I GM Peak Gate Current
V GM Peak Gate Voltage
A
155/170 A
120
5
A 2 S
W
0.5
Tj Operating Junction Temperature
Tstg Storage Temperature
Mass
2
W
A
10 V
-40~+125 ℃
-40~+150 ℃
2 g
Symbol Item Reference
Ratings
Min. Typ. Max.
Unit
I DRM Repetitive Peak Off-State Current
V TM Peak On-State Voltage
V D =V DRM , Single phase, half wave, Tj=125℃
I T =25A, Inst. measurement
I
+
GT1 1
2
3
4
Gate Trigger Current
I
-
GT1
I
+
GT3
I
-
GT3
V GD Non-Trigger Gate Voltage
V D =6V,R L =10Ω
mA
V
mA
0.2
10
25
2
1.4
30
30
―
30
1.5
1.5
―
1.5
1.4
V
+
GT1 1
2
3
4
Gate Trigger Voltage
V
-
GT1
V
+
GT3
V
-
GT3
V
Tj=125℃,V D = 1 / 2 V DRM
〔dv / dt〕c
Critical Rate of Rise of Off-State
Voltage at Commutation
I H Holding Current
Rth Thermal Resistance
Tj=125℃,〔di/dt〕c= - 8A/ms,V D =400V
Junction to case
V
V/μs
mA
℃/W