描述
ihw20n120r2
IGBT 晶体管 REVERSE CONDUCT IGBT 1200V 20A
否
Fairchild Semiconductor
集电极—发射极最大电压
650 V
2.3 V
20 V 在25
150 A
400 nA
187 W
TO-247
Tube
IHW20N120R2
Infineon Technologies AG
INFINEON
12
375 kb
Reverse Conducting IGBT with monolithic body diode