描述
gt50j325
Toshiba America Electronic Components
Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH)
Toshiba America Electronic Components
TRANS IGBT CHIP N-CH 600V 50A 3PIN TO-3P(LH) - Trays
Toshiba America Electronic Components
IGBT 600V TO-3P(LH)
Toshiba America Electronic Components
IGBT, 600V, TO-3P(LH)
Toshiba America Electronic Components
IGBT, 600V, TO-3P(LH); Transistor
IGBT; DC Collector
50A; Collector Emitter Voltage
2.45V; Power Dissipation
240W; Collector Emitter Voltage
600V; Operating Temperature
-55C; No. of
3 ;RoHS
Yes
GT50J325
Toshiba Semiconductor
TOSHIBA
7
170 kb
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT